A record of the work.

Our work on performance optimization of Optically gated GaN transistors has been accepted to be presented in IEEE Electron Device Meeting 2024! This work investigates the fundamental physics and design strategies to improve response time, ON-current, and ON/OFF ratio, while mitigating persistent photocurrent in GaN-based Optically Triggered (OT) transistors by utilizing the first-ever experimentally calibrated TCAD models.

Our work on "Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure" has been published on Applied Physics Letter .This work investigates the role of Schottky contact, space-charge limited current (SCLC), and trap states in determining hole transport behavior in p-GaN/AlGaN/GaN heterostructures under varying conditions.

Dr. Nadim Chowdhury attended a talk on recent advancements at Mitsubishi Electric Research Laboratories(MERL) in integrating AI with wide-bandgap devices to optimize electrical characteristics. The discussion highlighted how AI could potentially replace traditional TCAD simulations in the future for device optimization.

Congratulations Toiyob on attending IEEE Electron Devices Technology and Manufacturing 2024! His work explores the robustness of AlGaN/GaN multimetal gated (MMG) HEMT architecture for optimizing third-order transconductance (gm3) and improving linearity in the presence of Fermi-Level pinning (FLP).

Congratulations to Bejoy Sikder on being accepted into both MIT's EECS and DMSE programs! This marks a remarkable achievement, as Bejoy becomes the first Bangladeshi student to gain admission to both of these prestigious departments.

Congratulations to Abdullah Jubair Bin Iqbal for getting admitted into UCSB materials department.He is going to start his class on Fall 2024.

Congratulations to Ayan Biswas for getting admitted into Purdue ECE department.He is going to start his class on Fall 2024.

The group reports reduced dynamic on-resistance in vertical GaN diodes through buffer and termination engineering.