A New Gate Architecture for Linear GaN Power Amplifiers
AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity
IEEE Transactions on Electron Devices
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Research
6 areas
01
Process and materials development for AlGaN/GaN heterostructures and transistors—from Ohmic contact formation and regrowth to gate recess and field-plate engineering for RF and harsh-environment HEMTs.
02
13 publications
Fundamental studies of carrier transport, trapping, and barrier effects in wide-bandgap devices, with emphasis on high-temperature, radiation-tolerant, and harsh-environment operation of GaN transistors.
AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity
IEEE Transactions on Electron Devices
Barrier heights and Fermi level pinning in metal contacts on p-type GaN
Applied Physics Letters
Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs
IEDM
03
Machine-learning-assisted inverse design and design-technology co-optimization (DTCO) for semiconductor devices and circuits, linking CAD automation with experimental device data.
04
5 publications
Physics-based and TCAD modeling that connects material and interface properties to measured device behavior, including Fermi-level pinning, hole transport, and compact models for AlGaN/GaN HEMTs.
Barrier heights and Fermi level pinning in metal contacts on p-type GaN
Applied Physics Letters
Gate Stack Engineering and Carrier Dynamics of Optically Triggered GaN Transistors on 650V GaN-on-Si Power Platform
IEDM
Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure
Applied Physics Letters
05
Heterogeneous and three-dimensional integration of wide-bandgap devices with advanced interconnects to improve electrical performance, thermal management, and system-level density.
06
Monolithic GaN circuit design on silicon and native substrates, spanning operational amplifiers, logic, and integrated subsystems for RF, power conversion, and high-temperature applications.