NC Group — Wide-bandgap semiconductor device research at BUET

The Blueprint That Set GaN's Course

Journal of Physics D: Applied Physics

From Power Bricks to Qubits: Where GaN Goes Next

Journal of Applied Physics

A 1.2 kV Switch That Runs at Megahertz

IEEE Electron Device Letters

Growing Upward: The Material Problems Vertical GaN Must Solve

Materials Science in Semiconductor Processing

Can a Wide Bandgap Ever Do CMOS?

IEEE Transactions on Electron Devices

Laying the Foundation: The First p-Channel GaN Transistor on Silicon

IEEE Electron Device Letters

The Blueprint That Set GaN's Course

Journal of Physics D: Applied Physics

From Power Bricks to Qubits: Where GaN Goes Next

Journal of Applied Physics

A 1.2 kV Switch That Runs at Megahertz

IEEE Electron Device Letters

Growing Upward: The Material Problems Vertical GaN Must Solve

Materials Science in Semiconductor Processing

Can a Wide Bandgap Ever Do CMOS?

IEEE Transactions on Electron Devices

Laying the Foundation: The First p-Channel GaN Transistor on Silicon

IEEE Electron Device Letters

01 / RESEARCH

The physics of wide-bandgap devices, examined closely.

NC Group brings together device physics, modeling, simulation, and engineering to understand and advance next-generation semiconductor devices.

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Fabrication

Process and materials development for AlGaN/GaN heterostructures and transistors—from Ohmic contact formation and regrowth to gate recess and field-plate engineering for RF and harsh-environment HEMTs.

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Device Physics

Fundamental studies of carrier transport, trapping, and barrier effects in wide-bandgap devices, with emphasis on high-temperature, radiation-tolerant, and harsh-environment operation of GaN transistors.

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AI at Hardware Design

Machine-learning-assisted inverse design and design-technology co-optimization (DTCO) for semiconductor devices and circuits, linking CAD automation with experimental device data.

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Modeling & Simulation

Physics-based and TCAD modeling that connects material and interface properties to measured device behavior, including Fermi-level pinning, hole transport, and compact models for AlGaN/GaN HEMTs.

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3D-IC

Heterogeneous and three-dimensional integration of wide-bandgap devices with advanced interconnects to improve electrical performance, thermal management, and system-level density.

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Circuits

Monolithic GaN circuit design on silicon and native substrates, spanning operational amplifiers, logic, and integrated subsystems for RF, power conversion, and high-temperature applications.

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02 / OUR TEAM

The people behind the research.

Our group is dedicated to advancing the field of Wide Bandgap (WBG) semiconductor technology, with a specific focus on Gallium Nitride (GaN) devices. We specialize in the development of GaN RF and power devices, leveraging the unique properties of GaN to create high-performance solutions.

Meet the whole team →

03 / SELECTED CONTRIBUTIONS

What the group has produced.

PUBLICATIONS

Peer-reviewed journal and conference papers on GaN devices and modeling.

Browse Publications

PATENTS & INNOVATIONS

Patents on device architecture for RF and power GaN.

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RECOGNITION

Best Paper recognition at a device physics workshop

2023

All awards

04 / NEWS

Recent activity.

JUL 2024

PUBLICATION

New results on vertical GaN power diodes accepted to IEEE EDL.

The group reports reduced dynamic on-resistance in vertical GaN diodes through buffer and termination engineering.

MAY 2024

EVENT

NC Group presents work on RF reliability at a device physics workshop.

MAR 2024

NEWS

The group welcomes new graduate researchers to the modeling effort.

JAN 2024

NEWS

An early version of our open compact-model library is shared for feedback.

05 / JOIN OUR TEAM

Curious aboutsemiconductor devices?

We welcome students, researchers, and collaborators interested in understanding semiconductor devices deeply and contributing to meaningful research.

Get in touch →

Wide-bandgap Semiconductor Device Research

The Blueprint That Set GaN's Course

From Power Bricks to Qubits: Where GaN Goes Next

A 1.2 kV Switch That Runs at Megahertz

Growing Upward: The Material Problems Vertical GaN Must Solve

Can a Wide Bandgap Ever Do CMOS?

Laying the Foundation: The First p-Channel GaN Transistor on Silicon

The Blueprint That Set GaN's Course

From Power Bricks to Qubits: Where GaN Goes Next

A 1.2 kV Switch That Runs at Megahertz

Growing Upward: The Material Problems Vertical GaN Must Solve

Can a Wide Bandgap Ever Do CMOS?

Laying the Foundation: The First p-Channel GaN Transistor on Silicon

The physics of wide-bandgap devices, examined closely.

The people behind the research.

What the group has produced.

Recent activity.

New results on vertical GaN power diodes accepted to IEEE EDL.

NC Group presents work on RF reliability at a device physics workshop.

The group welcomes new graduate researchers to the modeling effort.

An early version of our open compact-model library is shared for feedback.

Curious aboutsemiconductor devices?

Wide-bandgap Semiconductor Device Research

The Blueprint That Set GaN's Course

From Power Bricks to Qubits: Where GaN Goes Next

A 1.2 kV Switch That Runs at Megahertz

Growing Upward: The Material Problems Vertical GaN Must Solve

Can a Wide Bandgap Ever Do CMOS?

Laying the Foundation: The First p-Channel GaN Transistor on Silicon

The Blueprint That Set GaN's Course

From Power Bricks to Qubits: Where GaN Goes Next

A 1.2 kV Switch That Runs at Megahertz

Growing Upward: The Material Problems Vertical GaN Must Solve

Can a Wide Bandgap Ever Do CMOS?

Laying the Foundation: The First p-Channel GaN Transistor on Silicon

The physics of wide-bandgap devices, examined closely.

The people behind the research.

What the group has produced.

Recent activity.

New results on vertical GaN power diodes accepted to IEEE EDL.

NC Group presents work on RF reliability at a device physics workshop.

The group welcomes new graduate researchers to the modeling effort.

An early version of our open compact-model library is shared for feedback.

Curious aboutsemiconductor devices?